Discrete Semiconductor Products

IPD80P03P4L07ATMA2

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POWER MOSFET, P CHANNEL, 30 V, 80 A, 0.0056 OHM, TO-252 (DPAK), SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 30 V, 80 A, 0.0056 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IPD80P03P4L07ATMA2

Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	80 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	88 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPD80P03P4L07ATMA2	2 V	175 °C	-55 °C	Automotive	5 V	-16 V	80 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	30 V	PG-TO252-3-11	P-Channel	6.8 mOhm	88 W	AEC-Q101	MOSFET (Metal Oxide)	5700 pF

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General part information

P-Channel 30 V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources