Specification	XPW4R10ANB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	170 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	8-DSOP Advance
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

XPW4R10ANB Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L

Part	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Grade	Package / Case	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage XPW4R10ANB,L1XHQ	20 V	MOSFET (Metal Oxide)	175 °C	-55 C	8-DSOP Advance	AEC-Q101	4.1 mOhm	Surface Mount	6 V 10 V	170 W	100 V	70 A	Automotive	8-PowerVDFN	N-Channel	3.5 V	75 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	98	$ 3.05

General part information

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L

Technical documentation and resources