Discrete Semiconductor Products

SI7460DP-T1-E3

LTB

MOSFET N-CH 60V 11A PPAK SO-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 11A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7460DP-T1-E3

Current - Continuous Drain (Id) (Ta)	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	100 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	9.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Type	Mounting Type	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Vgs(th) (Max)
Vishay Dale SI7460DP-T1-GE3	PowerPAK® SO-8	11 A	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Surface Mount	9.6 mOhm	10 V	4.5 V	100 nC	60 V	1.9 W	PowerPAK® SO-8	3 V
Vishay Dale SI7460DP-T1-E3	PowerPAK® SO-8	11 A	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Surface Mount	9.6 mOhm	10 V	4.5 V	100 nC	60 V	1.9 W	PowerPAK® SO-8	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources