Integrated Circuits (ICs)

CY14B108N-ZSP25XI

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INFINEON

NVSRAM, 8MBIT, 512K X 16BIT, PARALLEL, 2.7 TO 3.6 V, -40°C TO 85°C, TSOP-II-54

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Integrated Circuits (ICs)

CY14B108N-ZSP25XI

Active

INFINEON

NVSRAM, 8MBIT, 512K X 16BIT, PARALLEL, 2.7 TO 3.6 V, -40°C TO 85°C, TSOP-II-54

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY14B108N-ZSP25XI

Access Time	25 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	512K x 16
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Supplier Device Package	54-TSOP II
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page	25 ns

CY14B108 Series

Part	Memory Type	Write Cycle Time - Word, Page	Memory Organization	Access Time	Package / Case	Supplier Device Package	Memory Format	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Memory Interface	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
INFINEON CY14B108N-BA25XIT	Non-Volatile	25 ns	512K x 16	25 ns	48-TFBGA	48-FBGA (6x10)	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel
INFINEON CY14B108N-BA45XI	Non-Volatile		512K x 16	45 ns	48-TFBGA	48-FBGA (6x10)	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel	45 ns	45 ns
INFINEON CY14B108M-ZSP45XI	Non-Volatile		512K x 16	45 ns		54-TSOP II	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel	45 ns	45 ns
INFINEON CY14B108N-ZSP25XIT	Non-Volatile	25 ns	512K x 16	25 ns		54-TSOP II	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel
INFINEON CY14B108N-ZSP45XIT	Non-Volatile		512K x 16	45 ns		54-TSOP II	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel	45 ns	45 ns
INFINEON CY14B108N-ZSP25XI	Non-Volatile	25 ns	512K x 16	25 ns		54-TSOP II	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel
INFINEON CY14B108L-ZS25XI	Non-Volatile	25 ns	1M x 8	25 ns	44-TSOP (0.400" 10.16mm Width)	44-TSOP II	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel
INFINEON CY14B108L-BA45XI	Non-Volatile		1M x 8	45 ns	48-TFBGA	48-FBGA (6x10)	NVSRAM	Surface Mount	3.6 V	2.7 V	1024 KB	85 C	-40 ¯C	NVSRAM (Non-Volatile SRAM)	Parallel	45 ns	45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	115	$ 65.52
	Tray	1	$ 63.33
		10	$ 57.01
		25	$ 55.76
		40	$ 54.59
		108	$ 47.79
Newark	Each	1	$ 64.91
		5	$ 62.41
		10	$ 59.92
		25	$ 57.96
		50	$ 56.97

Description

General part information

CY14B108 Series

CY14B108N-ZSP25XI is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K words of 16 bits each. The embedded non-volatile elements incorporate Quantum Trap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Documents

Technical documentation and resources