Discrete Semiconductor Products

MMBT2222A_R1_00001

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TRANSISTOR GP BJT NPN 40V 0.6A 3-PIN SOT-23 T/R

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Discrete Semiconductor Products

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TRANSISTOR GP BJT NPN 40V 0.6A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT2222A_R1_00001

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Qualification	Grade
Panjit International Inc. MMBT2222AW_R1_00001	150 mW	100 hFE	NPN	150 °C	-55 °C	10 nA	40 V	Surface Mount	SC-70 SOT-323	SOT-323	1 V	600 mA
Panjit International Inc. MMBT2222A_R1_00001	225 mW	100 hFE	NPN	150 °C	-55 °C	10 nA	40 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	SOT-23	1 V	600 mA
Panjit International Inc. MMBT2222A-AU_R1_000A1	225 mW	100 hFE	NPN	150 °C	-55 °C	10 nA	40 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	SOT-23	1 V	600 mA	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN epitaxial silicon, planar design

Collector-emitter voltage VCE : 40V

Collector current IC : 600mA

Technical documentation and resources