Discrete Semiconductor Products

FQB3N80TM

Obsolete

ON Semiconductor

MOSFET N-CH 800V 3A D2PAK

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Discrete Semiconductor Products

FQB3N80TM

Obsolete

ON Semiconductor

MOSFET N-CH 800V 3A D2PAK

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQB3N80TM

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQB3 Series

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	FET Type	Technology	Package / Case	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
ON Semiconductor FQB3N40TM	2.5 A	30 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.13 W 55 W	7.5 nC	10 V	3.4 Ohm	5 V	230 pF	400 V	-55 °C	150 °C
ON Semiconductor FQB3N40TM	2.5 A	30 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.13 W 55 W	7.5 nC	10 V	3.4 Ohm	5 V	230 pF	400 V	-55 °C	150 °C
ON Semiconductor FQB32N20CTM	28 A	30 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.13 W 156 W		10 V	82 mOhm	4 V	2220 pF	200 V	-55 °C	150 °C	110 nC
ON Semiconductor FQB3N80TM	3 A	30 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount		19 nC	10 V	5 Ohm	5 V	690 pF	800 V	-55 °C	150 °C
ON Semiconductor FQB30N06TM	30 A	25 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.75 W 79 W		10 V	40 mOhm	4 V	945 pF	60 V	-55 °C	175 ░C	25 nC
ON Semiconductor FQB3P20TM	2.8 A	30 V	TO-263 (D2PAK)	P-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.13 W	8 nC	10 V	2.7 Ohm	5 V	250 pF	200 V	-55 °C	150 °C		52 W
ON Semiconductor FQB3N25TM	2.8 A	30 V	TO-263 (D2PAK)	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.13 W 45 W	5.2 nC	10 V	2.2 Ohm	5 V	170 pF	250 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQB3 Series

N-Channel 800 V 3A (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources

No documents available