Discrete Semiconductor Products

CMS04N06Y-HF

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MOSFET N-CH 60V 4A SOT223

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 4A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	CMS04N06Y-HF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	509 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Comchip Technology CMS04N06Y-HF	60 V	2.5 V	20 V	4 A	MOSFET (Metal Oxide)	509 pF	TO-261-4 TO-261AA	N-Channel	Surface Mount	4.5 V 10 V	3.1 W	100 mOhm	SOT-223	-55 °C	150 °C

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General part information

N-Channel 60 V 4A (Ta) 3.1W (Ta) Surface Mount SOT-223

Technical documentation and resources

No documents available