Discrete Semiconductor Products

PMZ290UNE2YL

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MOSFET N-CH 20V 1.2A DFN1006-3

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Discrete Semiconductor Products

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MOSFET N-CH 20V 1.2A DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ290UNE2YL

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	350 mW, 5.43 W
Rds On (Max) @ Id, Vgs [Max]	320 mOhm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Freescale Semiconductor - NXP PMZ290UNE2YL	1.2 A	20 V	N-Channel	MOSFET (Metal Oxide)	1.4 nC	Surface Mount	SC-101 SOT-883	950 mV	320 mOhm	5.43 W 350 mW	46 pF	8 V	1.5 V 4.5 V	-55 °C	150 °C	SOT-883

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General part information

N-Channel 20 V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount SOT-883

Technical documentation and resources