Discrete Semiconductor Products
EMH51T2R
ActiveRohm Semiconductor
NPN+NPN, SOT-563, DUAL DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR)
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Discrete Semiconductor Products
EMH51T2R
ActiveRohm Semiconductor
NPN+NPN, SOT-563, DUAL DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EMH51T2R |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 hFE |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Supplier Device Package | EMT6 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
EMH51 Series
Two DTC024E chips in a EMT6 package.
Documents
Technical documentation and resources