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TO-252AA
Discrete Semiconductor Products

FQD2N90TM

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA ROHS COMPLIANT: YES

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TO-252AA
Discrete Semiconductor Products

FQD2N90TM

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFQD2N90TM
Current - Continuous Drain (Id) @ 25°C1.7 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)50 W, 2.5 W
Rds On (Max) @ Id, Vgs7.2 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.94
10$ 1.24
100$ 0.84
500$ 0.66
1000$ 0.61
Digi-Reel® 1$ 1.94
10$ 1.24
100$ 0.84
500$ 0.66
1000$ 0.61
Tape & Reel (TR) 2500$ 0.55
5000$ 0.52
NewarkEach (Supplied on Full Reel) 1$ 0.72
3000$ 0.69
6000$ 0.63
12000$ 0.56
18000$ 0.54
30000$ 0.53
ON SemiconductorN/A 1$ 0.55

Description

General part information

FQD2N90 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.