Specification	NTMYS006N08LHTWG

Current - Continuous Drain (Id) @ 25°C	77 A, 16 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	89 W, 3.7 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMYS006N08HL Series

Power MOSFET 80 V, 77 A, 6.2mΩ Single N-Channel

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
ON Semiconductor NTMYS006N08LHTWG	80 V	3.7 W 89 W	N-Channel	5	LFPAK4	6	16 A 77 A	Surface Mount	MOSFET (Metal Oxide)	4.5 V 10 V	-55 °C	175 ░C	34 nC	1950 pF	SOT-1023 4-LFPAK	6.2 mOhm	2 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.