FDMW2512NZ

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MOSFET 2N-CH 20V 7.2A 6MLP

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 7.2A 6MLP

Technical Specifications

Parameters and characteristics for this part

Specification	FDMW2512NZ

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-WFDFN Exposed Pad
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	6-MLP (2x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Configuration	Technology
ON Semiconductor FDMW2512NZ	20 V	800 mW	6-WFDFN Exposed Pad	13 nC	Surface Mount	7.2 A	1.5 V	-55 °C	150 °C	26 mOhm	740 pF	6-MLP (2x5)	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1268	$ 0.24

General part information

Mosfet Array 20V 7.2A (Ta) 800mW (Ta) Surface Mount 6-MLP (2x5)

Technical documentation and resources

No documents available