Discrete Semiconductor Products

MCB120N08Y-TP

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N-CHANNEL MOSFET,D2-PAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB120N08Y-TP

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC
Input Capacitance (Ciss) (Max) @ Vds	5666 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs
MCC (Micro Commercial Components) MCB120N08Y-TP	4 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	5666 pF	80 V	10 V	208 W	D2PAK	4.5 mOhm	20 V	150 °C	-55 °C	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	73 nC
MCC (Micro Commercial Components) MCB120N08Y-TP	4 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	5666 pF	80 V	10 V	208 W	D2PAK	4.5 mOhm	20 V	150 °C	-55 °C	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	73 nC

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General part information

N-Channel 80 V 120A (Tc) 208W Surface Mount D2PAK

Technical documentation and resources