Specification	BUK7Y3R5-40HX

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3441 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	115 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V

BUK7Y3R5-40H Series

N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56

Part	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Grade	Drain to Source Voltage (Vdss)	Mounting Type	Qualification	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
Nexperia USA Inc. BUK7Y3R5-40HX	115 W	LFPAK56 Power-SO8	10 V	SC-100 SOT-669	Automotive	40 V	Surface Mount	AEC-Q101	-10 V	20 V	3.5 mOhm	53 nC	175 °C	-55 °C	MOSFET (Metal Oxide)	N-Channel	120 A	3441 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1556	$ 2.68

Description

General part information

BUK7Y3R5-40H Series

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.