Discrete Semiconductor Products

BF420,112

Obsolete

TRANS NPN 300V 0.05A TO-92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 300V 0.05A TO-92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BF420,112

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition
Freescale Semiconductor - NXP BF420,112	300 V	50 hFE	TO-92-3	0.01 µA	NPN	150 °C	600 mV	Through Hole	TO-226-3 TO-92-3	50 mA	60 MHz
Freescale Semiconductor - NXP BF420,116	300 V	50 hFE	TO-92-3	0.01 µA	NPN	150 °C	600 mV	Through Hole	TO-226-3 TO-92-3	50 mA	60 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 300 V 50 mA 60MHz 830 mW Through Hole TO-92-3

Technical documentation and resources