Discrete Semiconductor Products

UMX1N-TP

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TRANS 2NPN 50V 150MA SOT-363

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Discrete Semiconductor Products

Active

TRANS 2NPN 50V 150MA SOT-363

Technical Specifications

Parameters and characteristics for this part

Specification	UMX1N-TP

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Supplier Device Package	SOT-363
Transistor Type	2 NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Supplier Device Package
MCC (Micro Commercial Components) UMX1N-TP	100 nA	150 mA	150 °C	50 V	6-TSSOP SC-88 SOT-363	400 mV	2 NPN	120	Surface Mount	180 MHz	SOT-363
MCC (Micro Commercial Components) UMX1N-TP	100 nA	150 mA	150 °C	50 V	6-TSSOP SC-88 SOT-363	400 mV	2 NPN	120	Surface Mount	180 MHz	SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 NPN 50V 150mA 180MHz 150mW Surface Mount SOT-363

Technical documentation and resources