FFSH1265BDN-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 650 V, 12 A, 16 NC, TO-247
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FFSH1265BDN-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 650 V, 12 A, 16 NC, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSH1265BDN-F085 |
|---|---|
| Capacitance @ Vr, F | 259 pF |
| Current - Average Rectified (Io) | 7.2 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.47 | |
| 10 | $ 4.04 | |||
| 30 | $ 3.85 | |||
| 120 | $ 3.35 | |||
| 270 | $ 3.31 | |||
| Newark | Each | 1 | $ 5.21 | |
| 10 | $ 4.66 | |||
| 25 | $ 4.44 | |||
| 50 | $ 4.27 | |||
| 100 | $ 4.12 | |||
| 250 | $ 4.00 | |||
| ON Semiconductor | N/A | 1 | $ 3.04 | |
Description
General part information
FFSH1265BDN-F085 Series
EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Documents
Technical documentation and resources