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INFINEON IRFH5210TRPBF
Discrete Semiconductor Products

IRFH5210TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 55 A, 0.0126 OHM, PQFN, SURFACE MOUNT

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INFINEON IRFH5210TRPBF
Discrete Semiconductor Products

IRFH5210TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 55 A, 0.0126 OHM, PQFN, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFH5210TRPBF
Current - Continuous Drain (Id) @ 25°C10 A, 55 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC
Input Capacitance (Ciss) (Max) @ Vds2570 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)104 W, 3.6 W
Rds On (Max) @ Id, Vgs14.9 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.31
10$ 0.89
50$ 0.88
100$ 0.62
200$ 0.59
DigikeyCut Tape (CT) 1$ 2.38
10$ 1.53
100$ 1.05
500$ 0.84
1000$ 0.77
2000$ 0.72
Digi-Reel® 1$ 2.38
10$ 1.53
100$ 1.05
500$ 0.84
1000$ 0.77
2000$ 0.72
N/A 7078$ 1.76
Tape & Reel (TR) 4000$ 0.69

Description

General part information

IRFH5210 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.