Discrete Semiconductor Products

SUM40010EL-GE3

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MOSFET N-CH 40V 120A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SUM40010EL-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	11155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SUM40010EL-GE3	MOSFET (Metal Oxide)	TO-263 (D2PAK)	1.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	375 W	4.5 V 10 V	120 A	230 nC	Surface Mount	20 V	-55 °C	175 ░C	11155 pF	N-Channel	2.5 V	40 V

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General part information

N-Channel 40 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources