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Discrete Semiconductor Products

LSIC2SD120D20A

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LITTELFUSE

DIODE SCHOTTKY 1.2KV 54.5A 3-PIN(2+TAB) TO-263 T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

LSIC2SD120D20A

Active

LITTELFUSE

DIODE SCHOTTKY 1.2KV 54.5A 3-PIN(2+TAB) TO-263 T/R AUTOMOTIVE AEC-Q101

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC2SD120D20A

Capacitance @ Vr, F	1310 pF
Current - Average Rectified (Io)	55 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

LSIC2SD120D20A Series

SiC Schottky Diode 1200V 20A TO263-2L

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Grade	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)
LITTELFUSE LSIC2SD120D20A	100 µA	0 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263-2L	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	AEC-Q101	Surface Mount	1.2 kV	1.8 V	Automotive	1310 pF	500 mA	55 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	528	$ 10.51	1m+
Newark	Each	500	$ 13.11	1m+
TME	N/A	1	$ 22.54	<1d
		5	$ 20.34
		25	$ 17.92
		100	$ 16.18
		800	$ 15.03

Description

General part information

LSIC2SD120D20A Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Documents

Technical documentation and resources