Specification	MCH3479-TL-H

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	SC-70FL/MCPH3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

MCH3479 Series

Single N-Channel Power MOSFET 20V, 3.5A, 64mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)
ON Semiconductor MCH3479-TL-H	2.8 nC	N-Channel	64 mOhm	12 V	MOSFET (Metal Oxide)	260 pF	3.5 A	Surface Mount	900 mW	1.8 V 4.5 V	SC-70FL/MCPH3	150 °C	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MCH3479 is a Power MOSFET, 20V, 64mΩ, 3.5A, Single N-Channel for General-Purpose Switching Device Application.