Discrete Semiconductor Products

BD139-10-BP

Obsolete

TRANS NPN 80V 1.5A TO-126

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Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 1.5A TO-126

Technical Specifications

Parameters and characteristics for this part

Specification	BD139-10-BP

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
MCC (Micro Commercial Components) BD139-10-BP	500 mV	TO-126	1.5 A	TO-126-3 TO-225AA	1.25 W	63	100 nA	Through Hole	150 °C	-55 °C	80 V	NPN
MCC (Micro Commercial Components) BD139-10-BP	500 mV	TO-126	1.5 A	TO-126-3 TO-225AA	1.25 W	63	100 nA	Through Hole	150 °C	-55 °C	80 V	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126

Technical documentation and resources