HMC-ALH216-SX
ActiveRF AMPLIFIER GAAS HEMT WBAND LO NOISE AMP, 14-27 GHZ
Deep-Dive with AI
Search across all available documentation for this part.
HMC-ALH216-SX
ActiveRF AMPLIFIER GAAS HEMT WBAND LO NOISE AMP, 14-27 GHZ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC-ALH216-SX |
|---|---|
| Current - Supply | 90 mA |
| Frequency [Max] | 27 GHz |
| Frequency [Min] | 14 GHz |
| Gain | 18 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 2.7 dB |
| P1dB | 14 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Test Frequency [Max] | 27 GHz |
| Test Frequency [Min] | 14 GHz |
| Voltage - Supply | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC-ALH216-DIE Series
The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation
Documents
Technical documentation and resources