Discrete Semiconductor Products

AOD380A60C

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MOSFET N-CH 600V 11A TO252

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 11A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD380A60C

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	955 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	FET Type
Alpha & Omega Semiconductor Inc. AOD380A60C	MOSFET (Metal Oxide)	10 V	125 W	380 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.8 V	150 °C	-55 °C	30 V	600 V	20 nC	955 pF	11 A	Surface Mount	TO-252 (DPAK)	N-Channel

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General part information

N-Channel 600 V 11A (Tc) 125W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources