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TO252-3
Discrete Semiconductor Products

IPD180N10N3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 18 MOHM;

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TO252-3
Discrete Semiconductor Products

IPD180N10N3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 18 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD180N10N3GATMA1
Current - Continuous Drain (Id) @ 25°C43 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)71 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
Digi-Reel® 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
N/A 1729$ 1.04
Tape & Reel (TR) 2500$ 0.49
5000$ 0.45
7500$ 0.45
MouserN/A 1$ 0.97
10$ 0.78
25$ 0.75
100$ 0.63
500$ 0.55
1000$ 0.50
2500$ 0.45
5000$ 0.45

Description

General part information

IPD180 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources