Discrete Semiconductor Products
CGD65B130SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
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Discrete Semiconductor Products
CGD65B130SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65B130SH2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.9 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (5x6) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 20 V, -1 V |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4945 | $ 7.10 | |
Description
General part information
CGD65B130SH2
650V GAN HEMT, 130MOHM, DFN5X6.
Documents
Technical documentation and resources
No documents available