
Discrete Semiconductor Products
S4PKHM3_A/I
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 4A TO277A
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Discrete Semiconductor Products
S4PKHM3_A/I
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 4A TO277A
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | S4PKHM3_A/I |
|---|---|
| Capacitance @ Vr, F | 30 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | 3-PowerDFN, TO-277 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 2.5 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-277A (SMPC) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
S4P Series
Diode 800 V 4A Surface Mount TO-277A (SMPC)
Documents
Technical documentation and resources