Discrete Semiconductor Products

IRF6216PBF

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MOSFET P-CH 150V 2.2A 8SO

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Discrete Semiconductor Products

Unknown

MOSFET P-CH 150V 2.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6216PBF

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type
INFINEON IRF6216PBF	150 °C	-55 °C	MOSFET (Metal Oxide)	150 V	1280 pF	2.5 W	Surface Mount	8-SO	49 nC	2.2 A	5 V	240 mOhm	0.154 in	8-SOIC	3.9 mm	10 V	20 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00