Discrete Semiconductor Products
NTD5867NLT4G
ObsoleteON Semiconductor
60V 20A 39MΩ@10V,20A 36W 2.5V 1 N-CHANNEL TO-252-2(DPAK) MOSFETS ROHS
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Discrete Semiconductor Products
NTD5867NLT4G
ObsoleteON Semiconductor
60V 20A 39MΩ@10V,20A 36W 2.5V 1 N-CHANNEL TO-252-2(DPAK) MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTD5867NLT4G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 36 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NTD5867NL Series
POWER MOSFET 60V 19A 39mOhm Single N-Channel DPAK Logic Level
Documents
Technical documentation and resources