Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

Discrete Semiconductor Products

IXTH180N10T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

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Discrete Semiconductor Products

IXTH180N10T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH180N10T

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Input Capacitance (Ciss) (Max) @ Vds	6900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs [Max]	6.4 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

IXTH180N10T Series

DiscMSFT NChTrenchGate-Gen1 TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXTH180N10T	180 A	-55 °C	175 ░C	6.4 mOhm	10 V	30 V	TO-247 (IXTH)	100 V	480 W	Through Hole	N-Channel	MOSFET (Metal Oxide)	151 nC	TO-247-3	4.5 V	6900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.16
		30	$ 5.71
		120	$ 5.11
		510	$ 4.51
		1020	$ 4.06
		2010	$ 3.80
Newark	Each	250	$ 4.20
		500	$ 3.90

Description

General part information

IXTH180N10T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources