PSMN028-100HSX

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MOSFET 2N-CH 100V 29A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 29A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN028-100HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	2137 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	64 W
Rds On (Max) @ Id, Vgs	27.5 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

Part	Mounting Type	Configuration	Supplier Device Package	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PSMN028-100HSX	Surface Mount	2 N-Channel (Dual)	LFPAK56D	64 W	2137 pF	8-LFPAK56 SOT-1205	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 V	29 A	27.5 mOhm	34 nC

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General part information

Mosfet Array 100V 29A (Ta) 64W (Ta) Surface Mount LFPAK56D

Technical documentation and resources