Discrete Semiconductor Products

V1FL45HM3/I

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DIODE SCHOTTKY 45V 1A DO219AB

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Discrete Semiconductor Products

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DIODE SCHOTTKY 45V 1A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	V1FL45HM3/I

Capacitance @ Vr, F	190 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	250 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-219AB
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	530 mV

Part	Speed	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Grade	Current - Average Rectified (Io)	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division V1FL45HM3/I	200 mA 500 ns	Schottky	Surface Mount	45 V	530 mV	190 pF	Automotive	1 A	AEC-Q101	150 °C	-40 °C	DO-219AB	DO-219AB (SMF)	250 µA
Vishay General Semiconductor - Diodes Division V1FL45HM3/H	200 mA 500 ns	Schottky	Surface Mount	45 V	530 mV	190 pF	Automotive	1 A	AEC-Q101	150 °C	-40 °C	DO-219AB	DO-219AB (SMF)	250 µA
Vishay General Semiconductor - Diodes Division V1FL45-M3/H	200 mA 500 ns	Schottky	Surface Mount	45 V	530 mV	190 pF		1 A		150 °C	-40 °C	DO-219AB	DO-219AB (SMF)	250 µA
Vishay General Semiconductor - Diodes Division V1FL45-M3/I	200 mA 500 ns	Schottky	Surface Mount	45 V	530 mV	190 pF		1 A		150 °C	-40 °C	DO-219AB	DO-219AB (SMF)	250 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 45 V 1A Surface Mount DO-219AB (SMF)

Technical documentation and resources