Discrete Semiconductor Products

SI7462DP-T1-GE3

Obsolete

MOSFET N-CH 200V 2.6A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 2.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7462DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.6 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Rds On (Max)	130 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	4 V

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Package Name	Technology
Vishay Dale SI7462DP-T1-GE3	N-Channel	200 V	PowerPAK® SO-8	2.6 A	130 mOhm	Surface Mount	4 V	30 nC	PowerPAK® SO-8	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

N-Channel 200 V 2.6A (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources