Discrete Semiconductor Products

PJQ4466AP_R2_00001

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60V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4466AP_R2_00001

Current - Continuous Drain (Id) @ 25°C	33 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	44.6 W, 2 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Package / Case
Panjit International Inc. PJQ4466AP_R2_00001	2 W 44.6 W	28 nC	6 A 33 A	Surface Mount	150 °C	-55 °C	DFN3333-8	1680 pF	20 V	4.5 V 10 V	N-Channel	2.5 V	21 mOhm	60 V	MOSFET (Metal Oxide)	8-PowerVDFN

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General part information

N-Channel 60 V 6A (Ta), 33A (Tc) 2W (Ta), 44.6W (Tc) Surface Mount DFN3333-8

Technical documentation and resources