Discrete Semiconductor Products

SIR170DP-T1-RE3

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MOSFET N-CH 100V 23.2A/95A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 23.2A/95A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR170DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	23.2 A, 95 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	6195 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology
Vishay General Semiconductor - Diodes Division SIR170DP-T1-RE3	PowerPAK® SO-8	100 V	23.2 A 95 A	4.8 mOhm	4.5 V 10 V	N-Channel	20 V	140 nC	Surface Mount	PowerPAK® SO-8	6.25 W 104 W	-55 °C	150 °C	2.5 V	6195 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources