Discrete Semiconductor Products

PSMN2R8-40BS,118

Obsolete

MOSFET N-CH 40V 100A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R8-40BS,118

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	4491 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	211 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PSMN2R8-40BS,118	N-Channel	4491 pF	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	71 nC	40 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	D2PAK	2.9 mOhm	211 W	100 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 100A (Tc) 211W (Tc) Surface Mount D2PAK

Technical documentation and resources