Discrete Semiconductor Products

MCG30P03-TP

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P-CHANNEL MOSFET,DFN3333

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,DFN3333

Technical Specifications

Parameters and characteristics for this part

Specification	MCG30P03-TP

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	20 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	43.8 nC
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	32 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Micro Commercial Components MCG30P03-TP	30 A	P-Channel	2.8 V	4.5 V 20 V	30 V	MOSFET (Metal Oxide)	32 W	13 mOhm	DFN3333	20 V	2450 pF	8-VDFN Exposed Pad	Surface Mount	43.8 nC	-55 °C	150 °C
Micro Commercial Components MCG30N03A-TP	30 A	N-Channel	2.5 V	4.5 V 10 V	30 V	MOSFET (Metal Oxide)		10 mOhm	DFN3333	20 V		8-VDFN Exposed Pad	Surface Mount	28 nC	-55 °C	175 ░C	1020 pF	20 W

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General part information

P-Channel 30 V 30A (Tc) 32W Surface Mount DFN3333

Technical documentation and resources