Specification	OPB881T55Z

Current - Collector (Ic) (Max) [Max]	30 mA
Current - DC Forward (If) (Max) [Max]	50 mA
Mounting Type	Chassis Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 C
Output Configuration	Phototransistor
Package / Case	Module, Pre-Wired
Sensing Distance	3.18 mm
Sensing Distance	0.125 in
Sensing Method	Through-Beam
Type	Unamplified
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

OPB881 Series

Part	Type	Current - DC Forward (If) (Max) [Max]	Sensing Method	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Sensing Distance	Sensing Distance	Current - Collector (Ic) (Max) [Max]	Output Configuration
TT Electronics/BI OPB881T51Z	Unamplified	50 mA	Through-Beam	Chassis Mount	85 °C	-40 C	Module Pre-Wired	30 V	3.18 mm	0.125 in	30 mA	Phototransistor
TT Electronics/BI OPB881L55Z	Unamplified	50 mA	Through-Beam	Chassis Mount	85 °C	-40 C	Module Pre-Wired	30 V	3.18 mm	0.125 in	30 mA	Phototransistor
TT Electronics/BI OPB881L51Z	Unamplified	50 mA	Through-Beam	Chassis Mount	85 °C	-40 C	Module Pre-Wired	30 V	3.18 mm	0.125 in	30 mA	Phototransistor
TT Electronics/BI OPB881T55Z	Unamplified	50 mA	Through-Beam	Chassis Mount	85 °C	-40 C	Module Pre-Wired	30 V	3.18 mm	0.125 in	30 mA	Phototransistor

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Optical Sensor Through-Beam 0.125" (3.18mm) Phototransistor Module, Pre-Wired

Technical documentation and resources