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HMC1126ACEZ-R7
RF and Wireless

HMC1126ACEZ-R7

Active
Analog Devices Inc./Maxim Integrated

GAAS, PHEMT, LOW NOISE AMPLIFIER, 400 MHZ TO 52 GHZ

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HMC1126ACEZ-R7
RF and Wireless

HMC1126ACEZ-R7

Active
Analog Devices Inc./Maxim Integrated

GAAS, PHEMT, LOW NOISE AMPLIFIER, 400 MHZ TO 52 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC1126ACEZ-R7
Current - Supply85 mA
Frequency [Max]52 GHz
Frequency [Min]400 MHz
Gain12 dBi
Mounting TypeSurface Mount
Noise Figure6 dB
P1dB17.5 dBm
Package / Case24-LFLGA Exposed Pad
RF TypeGeneral Purpose
Supplier Device Package24-LGA-CAV (5x5)
Test Frequency [Max]40 GHz
Test Frequency [Min]26 GHz
Voltage - Supply [Max]5 V
Voltage - Supply [Min]3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 100$ 248.90<2d

Description

General part information

HMC1126 Series

The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.APPLICATIONSTest instrumentationMilitary and space