Specification	PMV65XPEAR

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	618 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	6.25 W, 480 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

PMV65XPEA Series

20 V, P-channel Trench MOSFET

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Qualification	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Grade	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
Nexperia USA Inc. PMV65XPEAR	P-Channel	2.8 A	618 pF	20 V	MOSFET (Metal Oxide)	AEC-Q101	2.5 V	4.5 V	SC-59 SOT-23-3 TO-236-3	78 mOhm	TO-236AB	1.25 V	12 V	9 nC	Automotive	6.25 W 480 mW	150 °C	-55 °C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	552	$ 0.75

Description

General part information

PMV65XPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.