Discrete Semiconductor Products

IRF6714MTRPBF

Obsolete

MOSFET N-CH 25V 29A/166A DIRECT

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 29A/166A DIRECT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6714MTRPBF

Current - Continuous Drain (Id) @ 25°C	166 A, 29 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds	3890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case
INFINEON IRF6714MTRPBF	2.1 mOhm	2.4 V	4.5 V 10 V	2.8 W 89 W	3890 pF	29 A 166 A	Surface Mount	N-Channel	44 nC	MOSFET (Metal Oxide)	DIRECTFET™ MX	20 V	-40 °C	150 °C	25 V	DirectFET™ Isometric MX
INFINEON IRF6714MTRPBF	2.1 mOhm	2.4 V	4.5 V 10 V	2.8 W 89 W	3890 pF	29 A 166 A	Surface Mount	N-Channel	44 nC	MOSFET (Metal Oxide)	DIRECTFET™ MX	20 V	-40 °C	150 °C	25 V	DirectFET™ Isometric MX

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 29A (Ta), 166A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources