Specification	MJPE45H11Z

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	90 MHz
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-277, 3-PowerDFN
Power - Max [Max]	1.65 W
Supplier Device Package	CFP15B
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MJPE45H11 Series

80 V, 8 A PNP high power bipolar transistor

Part	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Nexperia USA Inc. MJPE45H11Z	1 V	175 °C	PNP	TO-277 3-PowerDFN	80 V	Surface Mount	8 A	1.65 W	1 µA	90 MHz	CFP15B	60

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.18

General part information

PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources