Discrete Semiconductor Products

SI7949DP-T1-GE3

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MOSFET 2P-CH 60V 3.2A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2P-CH 60V 3.2A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7949DP-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	40 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	FET Feature	Package / Case	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI7949DP-T1-GE3	Logic Level Gate	PowerPAK® SO-8 Dual	2 P-Channel	PowerPAK® SO-8 Dual	-55 °C	150 °C	64 mOhm	3 V	3.2 A	40 nC	Surface Mount	MOSFET (Metal Oxide)	60 V	1.5 W

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General part information

Mosfet Array 60V 3.2A 1.5W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources