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ONSEMI NSBA123TF3T5G
Discrete Semiconductor Products

NSBC124EF3T5G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

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ONSEMI NSBA123TF3T5G
Discrete Semiconductor Products

NSBC124EF3T5G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

SpecificationNSBC124EF3T5G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60 hFE
Mounting TypeSurface Mount
Package / CaseSOT-1123
Power - Max [Max]254 mW
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
Supplier Device PackageSOT-1123
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
2000$ 0.10
Digi-Reel® 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
2000$ 0.10
Tape & Reel (TR) 8000$ 0.09
16000$ 0.08
24000$ 0.08
56000$ 0.08
NewarkEach (Supplied on Full Reel) 6000$ 0.06
12000$ 0.05
18000$ 0.05
30000$ 0.05
ON SemiconductorN/A 1$ 0.05

Description

General part information

NSBC124XPDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.