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IRFU9214PBF

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MOSFET P-CH 250V 2.7A TO251AA

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Discrete Semiconductor Products

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MOSFET P-CH 250V 2.7A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU9214PBF

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	3 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRFU9214PBF	10 V	4 V	14 nC	P-Channel	TO-251AA	-55 °C	150 °C	3 Ohm	MOSFET (Metal Oxide)	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	50 W	20 V	250 V	2.7 A

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General part information

P-Channel 250 V 2.7A (Tc) 50W (Tc) Through Hole TO-251AA

Technical documentation and resources