Discrete Semiconductor Products

BSP317PE6327

Obsolete

MOSFET P-CH 250V 430MA SOT223-4

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 250V 430MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BSP317PE6327

Current - Continuous Drain (Id) @ 25°C	430 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	262 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Grade	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Qualification	Package / Case
INFINEON BSP317PE6327	20 V	P-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	15.1 nC	PG-SOT223-4	2 V	4 Ohm	1.8 W	Automotive	430 mA	150 °C	-55 °C	262 pF	Surface Mount	250 V	AEC-Q101	TO-261-4 TO-261AA
INFINEON BSP317PE6327T	20 V	P-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	15.1 nC	PG-SOT223-4	2 V	4 Ohm	1.8 W	Automotive	430 mA	150 °C	-55 °C	262 pF	Surface Mount	250 V	AEC-Q101	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.42

General part information

P-Channel 250 V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources