Discrete Semiconductor Products

SIL2322A-TP

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MOSFET 2N-CH 20V 3A SOT23-6L

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 3A SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL2322A-TP

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.25 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Mounting Type
MCC (Micro Commercial Components) SIL2322A-TP	10 nC	1.25 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	SOT-23-6L	3 A	1.25 W	150 °C	-55 °C	20 V	30 mOhm	500 pF	SOT-23-6	Surface Mount
MCC (Micro Commercial Components) SIL2322A-TP	10 nC	1.25 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	SOT-23-6L	3 A	1.25 W	150 °C	-55 °C	20 V	30 mOhm	500 pF	SOT-23-6	Surface Mount

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General part information

Mosfet Array 20V 3A 1.25W Surface Mount SOT-23-6L

Technical documentation and resources