Specification	NVTYS010N04CTWG

Current - Continuous Drain (Id) @ 25°C	12 A, 38 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	492 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	32 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTYS010N04C Series

MOSFET – Power, Single, N-Channel, 40 V, 12 mΩ, 38 A

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Grade	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology
ON Semiconductor NVTYS010N04CTWG	10 V	3.1 W 32 W	7 nC	AEC-Q101	Automotive	8-LFPAK	N-Channel	40 V	Surface Mount	492 pF	-55 °C	175 ░C	12 A 38 A	12 mOhm	20 V	3.5 V	8-LFPAK56 SOT-1205	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 12 mΩ, 38 A

Technical documentation and resources