Specification	DS1230AB-70IND+

Access Time	70 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 kB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	28-DIP Module (0.600", 15.24mm)
Supplier Device Package	28-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page	70 ns

DS1230AB Series

Part	Memory Format	Memory Type	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Package / Case	Memory Interface	Supplier Device Package	Technology	Access Time	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1230AB-120IND+	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	120 ns	120 ns	85 C	-40 ¯C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-100+	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Surface Mount	34-PowerCap™ Module	Parallel	34-PowerCap Module	NVSRAM (Non-Volatile SRAM)	100 ns		70 °C	0 °C	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230AB-200IND	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	200 ns	200 ns	85 C	-40 ¯C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-200	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	200 ns	200 ns	70 °C	0 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-100	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Surface Mount	34-PowerCap™ Module	Parallel	34-PowerCap Module	NVSRAM (Non-Volatile SRAM)	100 ns		70 °C	0 °C	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230AB-100	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	100 ns		70 °C	0 °C	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230AB-70IND+	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	70 ns	70 ns	85 C	-40 ¯C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-120IND	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	120 ns	120 ns	85 C	-40 ¯C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-70IND+	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Surface Mount	34-PowerCap™ Module	Parallel	34-PowerCap Module	NVSRAM (Non-Volatile SRAM)	70 ns	70 ns	85 C	-40 ¯C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-85+	NVSRAM	Non-Volatile	32K x 8	4.75 V	5.25 V	Through Hole	28-DIP Module (0.600" 15.24mm)	Parallel	28-EDIP	NVSRAM (Non-Volatile SRAM)	85 ns	85 ns	70 °C	0 °C	32 kB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	1	$ 41.87	<4d
		12	$ 38.45
		36	$ 36.96
		60	$ 36.27
		108	$ 35.49
		252	$ 34.39
Mouser	N/A	1	$ 36.61	1m+
		12	$ 33.62
		24	$ 32.32
		60	$ 31.72
		108	$ 31.04
		252	$ 29.92

Description

General part information

DS1230AB Series

The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1230AB-70IND+ | Datasheet

Datasheet

DS1230AB Reliability Data

Reliability Data