Discrete Semiconductor Products

BSC883N03LSGATMA1

Obsolete

TRANS MOSFET N-CH 34V 17A 8-PIN TDSON EP T/R

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 34V 17A 8-PIN TDSON EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BSC883N03LSGATMA1

Current - Continuous Drain (Id) @ 25°C	17 A, 98 A
Drain to Source Voltage (Vdss)	34 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	57 W, 2.5 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology
INFINEON BSC883N03LSGATMA1	Surface Mount	8-PowerTDFN	150 °C	-55 °C	34 V	17 A 98 A	4.5 V 10 V	2800 pF	3.8 mOhm	20 V	34 nC	PG-TDSON-8-1	N-Channel	2.2 V	2.5 W 57 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 34 V 17A (Ta), 98A (Tc) 2.5W (Ta), 57W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources